SGM2016AN Sony Electronics, SGM2016AN Datasheet
SGM2016AN
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SGM2016AN Summary of contents
Page 1
... GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. ...
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... Crss f = 1MHz 10mA 1.5V G2S 900MHz 5V G1S –0.3V 10 –0.6V 5 –0. –2.0 V – 2 – SGM2016AN (Ta = 25°C) Min. Typ. Max. Unit 50 µA –8 µA –8 µ –2.5 V –2 0.9 2 1.2 2 ...
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... V G1S 30 3 2.5 20 2.0 15 1.5 NFmin 10 1 0.2 0.4 – 3 – SGM2016AN gm vs. V G1S V G2S = 1.5V 1.0V 0.5V 0V –0.5V –1.0V –1.5 –1.0 –0.5 0 – Gate 1 to source voltage [V] Ga vs. V G1S V = 1.5V G2S 1.0V 0.5V –0.8 –0.6 –0.4 –0.2 0 0.2 – Gate 1 to source voltage [V] NF, Ga vs. f ...
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... V = 1.5V 10mA) G2S MAG 7.5 40.0 10.8 39.5 13.9 39.0 16.8 38.5 19.5 37.9 22.0 37.4 24.5 36.8 26.8 36.1 29.1 35.5 31.4 34.8 33.8 34.1 36.1 33.4 38.6 32.6 41.2 31.9 43.9 31.0 46.8 30.2 50.0 29.3 53.4 28.5 57.0 27.5 – 4 – SGM2016AN = 10mA S12 S22 ANG MAG ANG 95.0 0.969 –1.3 87.9 0.966 –3.0 83.6 0.964 –4.2 77.7 0.961 –6.1 82.1 0.957 –7.2 76.3 0.955 –8.8 76.8 0.955 –9.9 78.7 0.954 –11.5 74.4 0.954 –12.8 82.6 0.953 –14.4 79.3 0.952 –15.6 72.4 0.949 –17.2 79 ...
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... Package Outline Unit: mm SGM2016AN 2.0 ± 0.2 1.3 (0.65 0.1 0.3 – 0.05 (0.65) 1.25 SONY CODE M-281 EIAJ CODE JEDEC CODE M-281 (0.65) 0.9 ± 0 0.1 0.4 – 0.05 (0. Source 2 : Gate Gate Drain EPOXY RESIN PACKAGE MATERIAL LEAD TREATMENT SOLDER PLATING LEAD MATERIAL COPPER 0.1g PACKAGE WEIGHT – 5 – SGM2016AN 0 ± 0.1 + 0.1 0.1 – 0.01 ...