SGM161 SeCoS Halbleitertechnologie GmbH, SGM161 Datasheet - Page 2

• Manufacturer Part Number: SGM161
• Description: N-channel Enhancement Mode Power Mos.fet
• Manufacturer: SeCoS Halbleitertechnologie GmbH

http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Source-Drain Diode
Electrical Characteristics( Tj=25 C
Rise Time
Turn-off Delay Time
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Fall Time
Input Capacitance
Reverse Transfer Capacitance
Notes: 1.Pulse width limited by Max. junction temperature.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current (Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Output Capacitance
Forward Transconductance
Reverse Recovery Charge
Forward On Voltage
Reverse Recovery Time
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch
Elektronische Bauelemente
Parameter
Parameter
2
2
≦
2
2
2
copper pad of FR4 board; 270
o
o
C
C
≦
o
BV
Symbol
R
V
Td
Symbol
BV
Td
Coss
Crss
Qgs
Qgd
Ciss
GS(th)
I
I
DS(ON)
Gfs
Qg
V
DS
GSS
DSS
T f
Tr
Trr
Qrr
(ON)
(Off)
DS
Unless otherwise specified)
DSS
/ Tj
Min.
0.5
Min.
20
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
N-Channel Enhancement Mode Power Mos.FET
° C/W
Typ.
18.4
144
111
Typ.
0.1
603
1.5
14
2.8
3.6
8.7
13
16.8
_
_
_
6
11
_
_
_
_
_
when mounted on min. copper pad.
_
Max.
±
1.2
Max.
100
250
5.3A, 20V,R
10
50
70
1.2
_
_
_
1
_
_
_
_
_
_
_
_
_
_
_
_
SGM161
Any changing of specification will not be informed individual
Unit
V/
m
Unit
nS
V
nA
uA
uA
V
nC
pF
S
nC
nS
Ω
o
V
C
DS(ON)
Reference to 25 , I
V
V
V
V
V
V
V
V
V
V
I
V
V
I
V
R
R
V
V
D
f=1.0MHz
Test Condition
D
GS
DS
GS
DS
DS
DS
I
dl/dt=100A/us
GS
GS
GS
DS
=5.3A
GS
DD
GS
G
GS
=1A
D
DS
Test Condition
I
S
S
=2
=15
=V
=5A,V
=0V, I
= ±12V
=20V,V
=16V,V
=5V, I
=4.5V, I
=1.5V, I
=10V
=2.5V, I
=4.5V
=15V
=10V
=1.2A, V
=0V
=15V
50m
Ω
GS,
Ω
I
D
GS
D
D
=250uA
=250uA
=5.3A
GS
GS
Ω
D
D
D
=0
=2A
=0.5A
=2A
=0
=0
GS
o
C
=0V.
D
= 1mA
Page 2 of 5