CY25AAJ-8F Renesas Electronics Corporation., CY25AAJ-8F Datasheet
CY25AAJ-8F
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CY25AAJ-8F Summary of contents
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... CY25AAJ-8F Nch IGBT for Strobe Flasher Features V : 400 V CES I : 150 A CM Drive voltage :4 V Outline SOP Applications Strobe flasher for cameras Maximum Ratings Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Rev.1.00, Aug.20.2004, page ...
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... CY25AAJ-8F Electrical Characteristics Parameter Collector-emitter breakdown voltage Gate-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Performance Curves Rev.1.00, Aug.20.2004, page Symbol Min. Typ. V 450 — (BR)CES V 8 — (BR)GES I — — CES I — — GES V — ...
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... CY25AAJ-8F Application Example IXe 30Ω V IGBT G Recommended Operation Conditions V 330 120 330 µ Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. ...
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... Rev.1.00, Aug.20.2004, page Lead Material 0.07 Cu alloy A 1.8 max Detail A 1.5 0.1±0.1 0.05 or then 10°max 0.15 Quantity Standard order code 3000 Type name – T +Direction (1 or 2)+3 100 Type name Dimension in Millimeters Symbol Min Typ Max Standard order code example CY25AAJ-8F-T13 CY25AAJ-8F ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...