QS6K1 ROHM Co. Ltd., QS6K1 Datasheet

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QS6K1

Manufacturer Part Number
QS6K1
Description
2.5v Drive Nch+nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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QS6K1
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ROHM
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QS6K1
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QS6K1 TR
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QS6K1TR
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Transistors
2.5V Drive Nch+Nch MOS FET
QS6K1
Silicon N-channel
MOS FET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
Power switching, DC / DC converter.
<It is the same ratings for the Tr1 and Tr2>
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation (T
Channel temperature
Storage temperature
∗ Mounted on a ceramic board
Type
QS6K1
Structure
Features
Application
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
C
=25°C)
Symbol
Taping
V
V
Tstg
Tch
3000
I
I
P
Rth (ch-a)
I
TR
DSS
GSS
DP
I
SP
D
S
D
Symbol
∗1
∗1
∗2
−55 to +150
Limits
±1.0
±4.0
1.25
150
0.8
4.0
0.9
30
12
Limits
100
139
W / ELEMENT
W / TOTAL
Unit
°C
°C
V
V
A
A
A
A
°C / W / TOTAL
°C / W / ELEMENT
External dimensions (Unit : mm)
TSMT6
Unit
1pin mark
(6)
Abbreviated symbol : K01
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
0.95
(1)
Equivalent circuit
(6)
(1)
(5)
2.9
1.9
0.4
0.95
(2)
(4)
∗2
(3)
∗1
Each lead has same dimensions
(5)
(2)
1.0MAX
0.16
0.85
0.7
∗1
∗2
0 ~ 0.1
Rev.B
(4)
(3)
(6)
(1)
QS6K1
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
(5)
(2)
(4)
(3)
1/3

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QS6K1 Summary of contents

Page 1

... A S ∗1 4 TOTAL ∗ ELEMENT °C 150 −55 to +150 °C Symbol Limits Unit ° TOTAL ∗ 100 ° ELEMENT 139 QS6K1 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) ( 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : K01 Equivalent circuit (6) (5) (4) (6) ∗ ...

Page 2

... R L ∗ − − =10Ω ∗ − 1.7 2 ∗ − − =4.5V 0 ∗ − − =1.0A 0 Min. Typ. Max. Unit ∗ − − =3.2A QS6K1 Conditions =0V DS =0V GS =0V GS =1mA D =4.5V GS =4.0V GS =2.5V GS =10V DS 15V DD 15V Conditions =0V GS Rev.B 2/3 ...

Page 3

... On-State Resistance vs. Gate-Source Voltage 10000 = Pulsed Ta=125°C 1000 Ta=75°C Ta=25°C Ta= −25°C 100 10 0.01 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) QS6K1 8 Ta=25°C =15V = =10Ω Pulsed ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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