QS6M3 ROHM Co. Ltd., QS6M3 Datasheet
QS6M3
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QS6M3 Summary of contents
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... A S ∗1 −6.0 6.0 A ∗2 1. TOTAL D 0 ELEMENT °C 150 −55 to +150 °C Symbol Limits Unit ° TOTAL ∗ 100 ° ELEMENT 139 QS6M3 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) ( 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : M03 Equivalent circuit (6) (5) (4) ∗2 ∗ ...
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... R G ∗ − − 1 ∗ − − =4.5V 0 ∗ − − =1.5A 0 Min. Typ. Max. Unit ∗ − − =3.2A QS6M3 Conditions =0V DS =0V GS =0V GS =1mA D =4.5V GS =4.0V GS =2.5V GS =10V DS 15V DD =10Ω 15V R L =10Ω Conditions =0V GS Rev.B 2/7 ...
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... V DD ∗ − − = −4.5V 0 ∗ − − = −1.5A 0. Min. Typ. Max. Unit − − −1.2 = −0.75A QS6M3 Conditions =0V DS =0V GS =0V GS =1mA D = −4. −4. −2. −10V DS −15V DD −15V =10Ω =10Ω Conditions =0V GS Rev.B ...
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... Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Pulsed Ta=125°C 1 Ta=75°C Ta=25°C Ta= −25°C 0.1 10 0.01 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) QS6M3 6 Ta=25°C =15V =15V V DD =4.5V =1. =10Ω =10Ω Pulsed ...
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... Gate-Source Voltage 10000 V GS Pulsed Ta=125°C Ta=75°C 1000 Ta=25°C Ta= −25°C 100 10 10 0.1 1 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) QS6M3 0.5 1 1.5 2 2.5 TOTAL GATE CHARGE : Qg (nC) Fig.3 Dynamic Input Characteristics 10 1 ...
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... GS D D.U. Fig.1-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.2-1 Gate Charge Measurement Circuit QS6M3 Pulse Width 90% 50% 50% 10 10% 10% 90% 90 d(on) d(off off Fig.1-2 Switching Waveforms ...
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... GS D D.U. Fig.3-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.4-1 Gate Charge Measurement Circuit QS6M3 Pulse Width V GS 10% 50% 50% 90% 10% 10% 90% 90 d(on) d(off off Fig.3-2 Switching Waveforms ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...