QS6M4 ROHM Co. Ltd., QS6M4 Datasheet
QS6M4
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QS6M4 Summary of contents
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... Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Structure Silicon P-channel MOSFET Silicon N-channel MOSFET Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (2.5V). Applications Load switch, inverter Packaging specifications Package ...
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... V 15V DD ∗ − − =4.5V 0 ∗ − − =1.5A 0 Min. Typ. Max. Unit ∗ − − =3. 1 QS6M4 Conditions =0V DS =0V GS =0V GS =1mA D =4.5V GS =4.0V GS =2.5V GS =1.0A D 15V DD =10Ω G =10Ω =10Ω Conditions =0V GS Rev.B 2/5 ...
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... V DD ∗ − − = −4.5V 0 ∗ − − = −1.5A 0. Min. Typ. Max. Unit − − −1.2 = −0.75A / QS6M4 Conditions =0V DS =0V GS =0V GS =−1mA D = −4. −4. −2. −0.75A D −15V DD =10Ω G −15V =10Ω =10Ω Conditions ...
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... Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Pulsed Ta=125°C 1 Ta=75°C Ta=25°C Ta= −25°C 0.1 10 0.01 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) QS6M4 6 Ta=25°C =15V =15V V DD =4.5V =1. =10Ω =10Ω Pulsed ...
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... Gate-Source Voltage 10000 V GS Pulsed Ta=125°C Ta=75°C 1000 Ta=25°C Ta= −25°C 100 10 10 0.1 1 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) QS6M4 0.5 1.0 1.5 2.0 TOTAL GATE CHARGE : Qg (nC) Fig.3 Dynamic Input Characteristics 10 1 0.1 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...