SP8K5 ROHM Co. Ltd., SP8K5 Datasheet - Page 3

• Manufacturer Part Number: SP8K5
• Description: 4v Drive Nch+nch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
Electrical characteristic curves
0.001
1000
0.01
100
0.1
1000
10
10
100
0.01
1
Fig.4 Typical Transfer Characteristics
10
0.0
0.01
Fig.1 Typical Capacitance
V
Pulsed
DRAIN-SOURCE VOLTAGE : V
DS
GATE-SOURCE VOLTAGE : V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.5
=10V
Fig.7 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
vs. Drain-Source Voltage
0.1
1.0
DRAIN CURRENT : I
On-State Resistance
vs. Drain Current (Ι)
0.1
1.5
2.0
1
2.5
1
3.0
10
D
Ta=25°C
f=1MHz
V
V
Pulsed
GS
(A)
GS
GS
DS
=0V
3.5
=10V
C
C
C
(V)
(V)
oss
iss
rss
100
4.0
10
1000
1000
100
100
500
450
400
350
300
250
200
150
100
10
10
50
1
0.01
0.01
0
Fig.2 Switching Characteristics
0
Fig.5 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
GATE-SOURCE VOLTAGE : V
Fig.8 Static Drain-Source
2
t
DRAIN CURRENT : I
d (off)
DRAIN CURRENT : I
t
On-State Resistance vs.
Gate-Source Voltage
d (on)
t
f
t
4
On-State Resistance
vs. Drain Current (ΙΙ)
r
0.1
I
I
0.1
D
D
=3.5A
=1.75A
6
8
10
1
1
D
D
12
Ta=25°C
V
V
R
Pulsed
V
Pulsed
(A)
(A)
Ta=25°C
Pulsed
DD
GS
G
GS
=10Ω
=15V
=10V
GS
=4.5V
14
(V)
10
10
16
0.01
1000
0.1
100
10
10
10
1
9
8
7
6
5
4
3
2
1
0
0.0
0.01
Fig.3 Dynamic Input Characteristics
0
Ta=25°C
V
I
R
Pulsed
D
SOURCE-DRAIN VOLTAGE : V
DD
=7.5A
G
Fig.6 Source Current vs.
Fig.9 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
=10Ω
TOTAL GATE CHARGE : Qg (nC)
=15V
1
DRAIN CURRENT : I
On-State Resistance
vs. Drain Current (ΙΙΙ)
Source-Drain Voltage
0.5
0.1
Rev.B
2
3
1.0
SP8K5
1
D
(A)
4
V
Pulsed
V
Pulsed
GS
SD
GS
=0V
=4V
(V)
3/3
1.5
10
5