SP8K4 ROHM Co. Ltd., SP8K4 Datasheet - Page 2

• Manufacturer Part Number: SP8K4
• Description: 4v Drive Nch+nch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
<It is the same characteristics for the Tr1 and Tr2.>
<It is the same characteristics for the Tr1 and Tr2.>
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
V
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
1.0
7.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1190
Typ.
Typ.
340
190
3.0
6.1
12
16
17
10
15
55
22
15
−
−
−
−
−
−
Max.
Max.
±10
1.2
2.5
17
23
24
21
−
1
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
I
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
S
D
D
D
D
D
D
D
=6.4A, V
GS
DS
DS
DS
GS
GS
DD
GS
=1mA, V
=9.0A, V
=9.0A, V
=9.0A, V
=9.0A, V
=4.5A, V
L
G
=9.0A
=3.33Ω
=10Ω
=±20V, V
=30V, V
=10V, I
=10V
=0V
=10V
=5V
15V
Conditions
GS
Conditions
GS
GS
GS
GS
DS
DD
D
GS
=1mA
=0V
=0V
=10V
=4.5V
=4V
=10V
DS
=0V
15V
=0V
Rev.B
SP8K4
2/3