XP03312 Panasonic Corporation of North America, XP03312 Datasheet

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XP03312

Manufacturer Part Number
XP03312
Description
Silicon Npn Pnp Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
XP0331200L
Manufacturer:
TOSH
Quantity:
104
Part Number:
XP0331200L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Composite Transistors
XP03312
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
Publication date: June 2003
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• UNR2212 + UNR2112
Tr1
Tr2
Overall
(Transistors with built-in resistor)
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Parameter
Symbol
V
V
V
V
T
P
CBO
I
CBO
I
T
CEO
CEO
a
stg
C
C
T
j
= 25°C
−55 to +150
Rating
−100
−50
−50
100
150
150
50
50
SJJ00158BED
Unit
mW
mA
mA
°C
°C
V
V
V
V
Marking Symbol: 4P
Internal Connection
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
EIAJ: SC-88A
10˚
(0.65) (0.65)
0.20
5
1
1.3
2.0
±0.05
±0.1
±0.1
2
Tr1
5
1
4
3
2
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
SMini5-G1 Package
Tr2
4
3
0.12
+0.05
–0.02
Unit: mm
1

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XP03312 Summary of contents

Page 1

... Composite Transistors XP03312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half ■ ...

Page 2

... XP03312 ■ Electrical Characteristics T • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level ...

Page 3

... C  25° 0.4 0.6 0.8 1.0 1.2 1.4 Input voltage V (V) IN SJJ00158BED XP03312  400 = 300 = 75° 200 25°C −25°C 100 100 1 000 Collector current I (mA) C  100 = 0 ...

Page 4

... XP03312 Characteristics charts of Tr2  −160 = 25° −1 − 0.9mA − 0.8mA −120 − 0.7mA − 0.6mA − 0.5mA −80 − 0.4mA − 0.3mA − 0.2mA −40 − 0.1mA 0 −2 −4 −6 −8 −10 − Collector-emitter voltage V CE  ...

Page 5

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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