NTGS4111P ON Semiconductor, NTGS4111P Datasheet - Page 3

• Manufacturer Part Number: NTGS4111P
• Description: Power Mosfet -30 V, -4.7 A, Single P-channel, Tsop-6
• Manufacturer: ON Semiconductor

12
10
11
0.1
0.2
1.5
1.0
0.5
9
8
7
6
5
4
3
2
1
0
0
0
−50
−10V
2
Figure 3. On−Resistance vs. Gate−to−Source
0.4
I
V
−V
D
GS
Figure 1. On−Region Characteristics
= −3.7 A
−25
DS
3
Figure 5. On−Resistance Variation with
= −10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.8
−V
T
J
GS,
, JUNCTION TEMPERATURE (°C)
4
1.2
0
−4.5 V
−5 V
GATE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
1.6
5
25
−5.5 V
Temperature
T
−6 V
−4.2 V
Voltage
J
= 25°C
2
6
50
−8 V
2.4
7
75
2.8
100
8
3.2
T
I
D
J
= −3.7 A
= 25°C
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−3.8 V
−3.6 V
−3.4 V
−3.2 V
3.6
−3 V
125
9
−4 V
NTGS4111P
150
4
10
3
100000
10000
1000
0.05
100
0.1
(T
12
10
11
0
9
8
7
6
5
4
3
2
1
0
2.0
J
5
Figure 4. On−Resistance vs. Drain Current and
1
= 25°C unless otherwise noted)
V
V
Figure 6. Drain−to−Source Leakage Current
T
GS
DS
J
−V
−V
= 25°C
1.5
= 0 V
DS
≥ −10 V
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
2
25°C
DRAIN CURRENT (AMPS)
V
V
GS
GS
Gate Voltage
2.5
15
= −4.5 V
3.0
vs. Voltage
= −10 V
T
T
100°C
J
J
= 100°C
= 150°C
3
T
J
= −55°C
20
3.5
4
25
4.0
4.5
30
5