NTGS4111P ON Semiconductor, NTGS4111P Datasheet - Page 4

• Manufacturer Part Number: NTGS4111P
• Description: Power Mosfet -30 V, -4.7 A, Single P-channel, Tsop-6
• Manufacturer: ON Semiconductor

−GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.01
0.0001
1400
1300
1200
1000
1100
100
0.1
0.001
900
800
700
400
300
200
100
600
500
10
0.01
1
0.1
0.1
0
1E−07
10
1
V
SINGLE PULSE
T
Figure 9. Maximum Rated Forward Biased
C
C
GS
C
V
−V
D = 0.5
iss
rss
0.05
0.02
0.01
0.1
= 25°C
0.2
DS
Single Pulse
= −20 V
DS
5
= 0 V
−V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1E−06
GS
Figure 7. Capacitance Variation
R
THERMAL LIMIT
PACKAGE LIMIT
0
DS(on)
Safe Operating Area
V
−V
GS
1
DS
TYPICAL PERFORMANCE CURVES
= 0 V
LIMIT
5
1E−05
C
oss
10
C
rss
15
1E−04
10
Figure 11. FET Thermal Response
20
T
100 ms
J
1 ms
10 ms
dc
1E−03
= 25°C
25
http://onsemi.com
C
NTGS4111P
iss
100
30
t, TIME (s)
4
1E−02
12
10
8
6
4
2
0
0
0.1
(T
10
1
Q
1
0.3
Figure 8. Gate−to−Source Voltage vs. Total
J
GS
= 25°C unless otherwise noted)
2
V
Figure 10. Diode Forward Voltage vs. Current
V
DS
1E−01
GS
−V
3
0.4
SD
= 0 V
Q
4
Q
g
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
, TOTAL GATE CHARGE (nC)
GD
5
0.5
T
J
6
= 150°C
1E+00
Gate Charge
7
0.6
QT
8
9
0.7
1E+01
10
11
V
0.8
GS
12
T
J
I
T
13
D
= −55°C
J
0.9
1E+02
T
= −3.7 A
= 25°C
J
14
T
= 25°C
J
= 100°C
15
1.0
16
1E+03
20
10
0
1.1