US5L12 ROHM Co. Ltd., US5L12 Datasheet
US5L12
Related parts for US5L12
US5L12 Summary of contents
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... Silicon epitaxial planar transistor Schottky barrier diode Equivalent circuit (5) (4) Di2 Tr1 (1) (2) (3) Packaging specifications Type US5L12 Package TUMT5 Marking L12 Code TR Basic ordering unit(pieces) 3000 External dimensions (Unit : mm) (4) (3) (2) (5) (1) 0.2 1.7 0.2 1pin mark 2.1 0.15Max. ROHM :TUMT5 Abbreviated symbol : L12 Rev.A US5L12 1/4 ...
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... FE − − f 320 T − − Cob 7 Symbol Min. Typ. Max. − 450 490 V F − − I 200 R − − trr 9 US5L12 ∗ Unit Conditions =10µ =1mA =10µ =30V = =500mA, I =25mA ∗ ...
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... Ta=Š40˚C 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : I (A) C Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 1000 100 V =2V CE Ta=25˚C f=100MHz 10 0.01 0.1 1 EMITTER CURRENT : I (A) E Fig.5 Gain bandwidth product vs. emitter current US5L12 10 Ta=25˚ =50 =20 0. =10 0.001 0.001 0.01 0.1 ...
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... Transistors Di2 10 1 100m 10m 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : V (V) F Fig.8 Forward characteristics 1000m 100m Ta=125˚C 10m 1m 100µ Ta=25˚C 10µ Ta=−25˚C 1µ 0.1µ REVERSE VOLTAGE : V (V) R Fig.9 Reverse characteristics US5L12 Rev.A 4/4 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...