SIR492DP Vishay, SIR492DP Datasheet

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SIR492DP

Manufacturer Part Number
SIR492DP
Description
N-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR492DP
Manufacturer:
NEC
Quantity:
181
Part Number:
SIR492DP-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
29 658
Part Number:
SIR492DP-T1-GE3
Manufacturer:
Microchip
Quantity:
351
Part Number:
SIR492DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited, pulse time ≤ 200 ms.
Document Number: 68840
S-82288-Rev. B, 22-Sep-08
Ordering Information: SiR492DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
ABSOLUTE MAXIMUM RATINGS T
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
12
(V)
8
6.15 mm
D
7
D
0.0038 at V
0.0047 at V
6
D
PowerPAK SO-8
Bottom View
5
R
http://www.vishay.com/ppg?73257
D
DS(on)
GS
GS
J
(Ω)
1
= 4.5 V
= 2.5 V
= 150 °C)
S
2
S
N-Channel 12-V (D-S) MOSFET
3
S
5.15 mm
4
I
G
D
40
40
(A)
c, d
e
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C, unless otherwise noted
Q
41 nC
g
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• Secondary Synchronous Rectification
• Point-of-Load
• Load Switch
Symbol
T
J
Package with Small Size and Low 1.07 mm Profile
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
g
Tested
®
Power MOSFET
- 50 to 150
21.6
3.5
4.2
2.7
27
Limit
40
35
260
± 8
12
60
30
36
23
G
a, b
a, b
a, b
a, b
e
e
a, b
N-Channel MOSFET
Vishay Siliconix
D
S
®
SiR492DP
www.vishay.com
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SIR492DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR492DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiR492DP Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 70 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... Document Number: 68840 S-82288-Rev. B, 22-Sep-08 New Product Symbol Test Conditions ° 3 dI/dt = 100 A/µ ° SiR492DP Vishay Siliconix Min. Typ. Max. Unit 0.61 1 www.vishay.com 3 ...

Page 4

... SiR492DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 1 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.0040 0.0038 0.0036 0.0034 V GS 0.0032 0.0030 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 8 ...

Page 5

... °C A Single Pulse BVDSS Limited 0.1 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient SiR492DP Vishay Siliconix T = 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0 ...

Page 6

... SiR492DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 80 60 Package Limited Pt ≤ 200 Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Document Number: 68840 S-82288-Rev. B, 22-Sep-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiR492DP Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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