SIR492DP Vishay, SIR492DP Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SIR492DP
Manufacturer Part Number
SIR492DP
Description
N-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SIR492DP.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIR492DP-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
29 658
Company:
Part Number:
SIR492DP-T1-GE3
Manufacturer:
Microchip
Quantity:
351
Part Number:
SIR492DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68840
S-82288-Rev. B, 22-Sep-08
0.001
- 0.3
- 0.5
- 0.1
0.01
100
0.3
0.1
0.1
10
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
I
D
0.2
= 5 mA
T
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
I
0.4
T
D
J
= 250 µA
25
- Temperature (°C)
0.6
50
T
J
= 25 °C
75
0.8
100
0.1
10
100
Limited by R
1
0.01
Safe Operating Area, Junction-to-Ambient
1.0
* V
Single Pulse
125
T
GS
A
= 25 °C
New Product
> minimum V
V
DS(on)
150
DS
0.1
1.2
- Drain-to-Source Voltage (V)
*
GS
BVDSS Limited
at which R
1
0.020
0.016
0.012
0.008
0.004
0.000
DS(on)
50
40
30
20
10
0
0.001
10
0
is specified
1 ms
10 ms
100 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
0.01
1
V
GS
100
- Gate-to-Source Voltage (V)
T
A
0.1
= 25 °C
2
Time (s)
Vishay Siliconix
T
1
A
= 125 °C
3
SiR492DP
10
www.vishay.com
4
100
600
5
5