SIR850DP Vishay, SIR850DP Datasheet - Page 3

• Manufacturer Part Number: SIR850DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68825
S-82287-Rev. B, 22-Sep-08
0.0100
0.0085
0.0070
0.0055
0.0040
70
60
50
40
30
20
10
10
8
6
4
2
0
0
0.0
On-Resistance vs. Drain Current and Gate Voltage
0
0
I
D
= 20 A
20
V
0.5
DS
5
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
V
40
I
- Total Gate Charge (nC)
D
DS
- Drain Current (A)
V
Gate Charge
= 6.25 V
GS
V
V
GS
= 10 thru 4 V
GS
V
1.0
DS
10
60
= 4.5 V
= 10 V
= 12.5 V
V
DS
80
V
= 18.75 V
GS
1.5
15
= 3 V
100
120
2.0
20
1500
1200
900
600
300
1.7
1.5
1.3
1.1
0.9
0.7
1.0
0.8
0.6
0.4
0.2
0.0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
I
D
0.5
= 20 A
5
V
V
Transfer Characteristics
GS
DS
0
T
J
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
oss
1.0
C
25
= 125 °C
Capacitance
10
T
C
C
= 25 °C
1.5
50
iss
Vishay Siliconix
V
GS
15
75
= 10 V
SiR850DP
2.0
www.vishay.com
100
V
GS
T
20
C
2.5
= 4.5 V
= - 55 °C
125
150
3.0
25
3