SIR850DP Vishay, SIR850DP Datasheet - Page 4

• Manufacturer Part Number: SIR850DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

SiR850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 0.7
- 1.0
- 0.1
0.01
100
0.5
0.2
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
I
D
Limited by R
= 250 µA
75
0.8
T
J
0.01
100
0.1
= - 50 °C
10
100
1
0.1
T
J
I
1.0
D
DS(on)
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
= 25 °C
T
= 1 mA
125
A
GS
= 25 °C
*
> minimum V
V
1.2
150
DS
- Drain-to-Source Voltage (V)
1
GS
BVDSS Limited
at which R
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
DS(on)
150
120
90
60
30
0
0
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
10 ms
100 ms
1 s
10 s
100 s, DC
1
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
T
J
S-82287-Rev. B, 22-Sep-08
Document Number: 68825
= 125 °C
6
T
7
J
= 25 °C
1
8
9
10
1
0