SIR892DP Vishay, SIR892DP Datasheet

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SIR892DP

Manufacturer Part Number
SIR892DP
Description
N-channel 25-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR892DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package limited.
Document Number: 68639
S-83048-Rev. B, 22-Dec-08
Ordering Information: SiR892DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
25
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
0.0042 at V
0.0032 at V
6
D
PowerPAK
5
R
Bottom View
www.vishay.com/ppg?73257
DS(on)
D
GS
GS
(Ω)
1
J
®
= 4.5 V
= 10 V
S
= 150 °C)
b, f
SO-8
2
S
N-Channel 25-V (D-S) MOSFET
3
S
5.15 mm
4
G
I
50
50
D
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(A)
a, g
a, g
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
20 nC
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Low-Side MOSFET in Synchronous Buck dc-to-dc
Symbol
Symbol
T
R
R
Converters
- Game Machine
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
2.0
20
G
- 55 to 150
N-Channel MOSFET
4.5
5.0
3.2
Limit
50
30
24
± 20
260
50
50
25
70
40
80
50
32
a, g
b, c
b, c
b, c
b, c
b, c
g
g
Maximum
D
S
2.5
25
Vishay Siliconix
SiR892DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SIR892DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR892DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiR892DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68639 S-83048-Rev. B, 22-Dec-08 New Product 1.5 2.0 2.5 3500 2800 2100 1400 33.6 42.0 SiR892DP Vishay Siliconix 125 ° ° ° 0.0 0.8 1.6 2.4 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SiR892DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.015 0.012 0.009 °C 0.006 J 0.003 0.000 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR892DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR892DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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