SIR892DP Vishay, SIR892DP Datasheet - Page 4

• Manufacturer Part Number: SIR892DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

SiR892DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.5
- 0.8
0.01
100
0.4
0.1
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
T
0.2
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
T
75
I
J
D
0.8
Limited by R
= 25 °C
= 250 µA
0.01
100
0.1
100
10
1
0.01
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
125
= 5 mA
DS(on)
GS
New Product
> minimum V
V
150
1.2
*
Single Pulse
0.1
DS
T
A
- Drain-to-Source Voltage (V)
= 25 °C
GS
at which R
1
BVDSS
Limited
0.015
0.012
0.009
0.006
0.003
0.000
DS(on)
200
160
120
80
40
10
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
I
Single Pulse Power, Junction-to-Ambient
D
1
= 10 A
10 ms
10 s
100 ms
1 s
DC
2
V
100
0.01
GS
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
S-83048-Rev. B, 22-Dec-08
Document Number: 68639
T
J
6
= 25 °C
7
1
T
J
8
= 125 °C
9
10
1
0