SIE830DF Vishay, SIE830DF Datasheet - Page 3

• Manufacturer Part Number: SIE830DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74422
S-70536-Rev. C, 26-Mar-07
0.0044
0.0042
0.0040
0.0038
0.0036
0.0034
0.0032
0.0030
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
I
D
= 20 A
On-Resistance vs. Drain Current
V
0.5
20
20
DS
Output Characteristics
Q
V
V
V
- Drain-to-Source Voltage (V)
GS
g
GS
I
GS
D
- Total Gate Charge (nC)
- Drain Current (A)
= 4.5 V
= 10 V
Gate Charge
= 10 thru 3 V
V
DS
1.0
40
40
= 15 V
V
GS
= 2 V
V
DS
1.5
60
60
= 32 V
New Product
2.0
80
80
1200
7200
6000
4800
3600
2400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
0
8
4
0
- 50
1.0
0
C
I
On-Resistance vs. Junction Temperature
C
D
iss
C
rss
T
= 16 A
- 25
oss
C
= 25 °C
5
1.4
T
V
C
V
DS
Transfer Characteristics
GS
T
= 125 °C
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
Capacitance
V
25
1.8
GS
= 4.5 V, 10 V
15
50
Vishay Siliconix
2.2
75
T
C
20
SiE830DF
= - 55 °C
100
www.vishay.com
2.6
25
125
3.0
150
30
3