SIE830DF Vishay, SIE830DF Datasheet - Page 4

• Manufacturer Part Number: SIE830DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiE830DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
- 50
Source-Drain Diode Forward Voltage
- 25
V
SD
0
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
T
J
= 150 °C
25
- Temperature (°C)
I
D
= 250 µA
50
75
0.01
100
0.1
100
10
T
0.01
1
J
= 25 °C
by r
Safe Operating Area, Junction-to-Ambient
*Limited
*V
125
DS(on)
GS
V
150
New Product
Single Pulse
0.1
minimum V
T
DS
A
= 25 °C
- Drain-to-Source Voltage (V)
GS
at which r
1
BVDSS
Limited
DS(on)
0.009
0.010
0.006
0.004
0.008
0.007
0.005
0.003
0.002
10
50
40
30
20
10
is specified
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
1 s
10 s
10 ms
1 ms
DC
100
0.1
2
V
GS
- Gate-to-Source Voltage (V)
1
4
Time (sec)
S-70536-Rev. C, 26-Mar-07
Document Number: 74422
T
T
A
A
10
= 25 °C
6
= 125 °C
I
D
100
8
= 16 A
1000
10