RHK003N06 ROHM Co. Ltd., RHK003N06 Datasheet

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RHK003N06

Manufacturer Part Number
RHK003N06
Description
4v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
4V Drive Nch MOS FET
RHK003N06
Silicon N-channel MOS FET
1) Low On-resistance.
2) 4V drive.
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
∗ Each terminal mounted on a recommended land
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Source current
(Body diode)
Type
RHK003N06
Structure
Features
Applications
Packaging specifications and h
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
T146
3000
FE
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
±300
±1.2
625
±20
200
800
200
150
60
External dimensions (Unit : mm)
(1)Source
(2)Gate
(3)Drain
Inner circuit
SMT3
°C/W
Unit
Unit
mW
mA
mA
mA
°C
°C
V
V
A
0.95 0.95
( 2 )
( 3 )
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Abbreviated symbol : RKS
1.9
2.9
0.4
( 1 )
(2)
0.15
Each lead has same dimensions
1.1
0.8
∗1
RHK003N06
(3)
(1)
(1)
(2)
(3)
∗2
Source
Gate
Drain
1/2

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RHK003N06 Summary of contents

Page 1

... S ∗1 I 800 mA SP ∗2 P 200 mW D °C Tch 150 −55 to +150 °C Tstg Symbol Limits Unit ∗ °C/W Rth(ch-a) 625 RHK003N06 2.9 1.1 0.4 0 0.95 0.95 0.15 1.9 Each lead has same dimensions Abbreviated symbol : RKS (3) ∗2 (2) (1) Source ∗1 (2) Gate (3) Drain ∗1 ESD PROTECTION DIODE (1) ∗ ...

Page 2

... R =10Ω G ∗ − ∗ − − 0 10V GS ∗ − − 0 300mA D Min. Typ. Max. Unit ∗ − − 1 300mA RHK003N06 Conditions =0V DS = 1mA D = 10V 300mA 30V Conditions =0V GS 2/2 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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