RSR025P03 ROHM Co. Ltd., RSR025P03 Datasheet - Page 2

• Manufacturer Part Number: RSR025P03
• Description: 4v Drive Pch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−1.0
Min.
−30
1.6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
100
115
460
105
5.4
1.4
1.6
70
65
10
10
42
10
−
−
−
−
−
−
Max.
Max.
−2.5
−1.2
±10
140
160
−1
98
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
I
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
GS
DD
L
= −0.8A, V
= −1mA, V
= −2.5A, V
= −1.2A, V
= −1.2A, V
= −1.2A
= −2.5A
=12.5Ω
=6Ω
= −30V, V
= −10V, I
= −10V, I
= −10V
=±20V, V
=0V
= −10V
=10Ω
−15V
−15 V
Conditions
Conditions
GS
GS
GS
GS
GS
D
D
V
R
DS
GS
= −1mA
= −1.2A
GS
=0V
= −10V
= −4.5V
= −4V
G
=0V
=0V
=10Ω
=0V
= −5V
RSR025P03
Rev.A
2/4