RSQ045N03 ROHM Co. Ltd., RSQ045N03 Datasheet

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RSQ045N03

Manufacturer Part Number
RSQ045N03
Description
4v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Part Number
Manufacturer
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Part Number:
RSQ045N03
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
RSQ045N03
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Part Number:
RSQ045N03TR
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Rohm
Quantity:
64 000
Transistors
4V Drive Nch MOSFET
RSQ045N03
Silicon N-channel MOSFET
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) Low voltage drive (4V drive).
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
∗ Mounted on a ceramic board
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Source current
(Body diode)
Type
RSQ045N03
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TR
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
±4.5
1.25
100
±18
150
1.0
30
20
18
Inner circuit
Dimensions (Unit : mm)
TSMT6
°C/W
Unit
Unit
°C
°C
W
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
V
V
A
A
A
A
(6)
(1)
Abbreviated symbol : QL
(5)
(2)
Each lead has same dimensions
∗2
RSQ045N03
Rev.A
∗1
(4)
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
1/3

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RSQ045N03 Summary of contents

Page 1

... S ∗ ∗2 P 1.25 D Tch 150 −55 to +150 Tstg Symbol Limits ∗ Rth(ch-a) 100 RSQ045N03 Each lead has same dimensions Abbreviated symbol : QL (6) (5) (4) ∗2 ∗1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source ∗1 ESD PROTECTION DIODE (5) Drain ∗2 BODY DIODE (6) Drain ...

Page 2

... 1.0A 1000 Ta=25°C Pulsed V =4. =4. =10V GS 100 10 1 0.1 1 DRAIN CURRENT : I (A) D Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (Ι) RSQ045N03 Conditions =0V DS = 1mA D = 10V =10Ω G Conditions =0V GS 1000 Ta=125°C Ta=75° ...

Page 3

... D Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (ΙV) 10000 Ta=25 C f=1MHz V GS 1000 Ciss 100 10 0.01 0 DRAIN-SOURCE VOLTAGE : V DS Fig.8 Typical Capacitance vs. Drain-Source Voltage RSQ045N03 200 =4.0V GS =4. 150 =2.25A I D 100 GATE-SOURCE VOLTAGE : V Fig.6 Static Drain-Source On-State Resistance vs. ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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