RZL035P01 ROHM Co. Ltd., RZL035P01 Datasheet
RZL035P01
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RZL035P01 Summary of contents
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... Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Application Switching Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 RZL035P01 Absolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage V DSS Gate-source voltage V GSS Continuous I D Drain current I ...
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... RZL035P01 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage I GSS −12 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −0.3 Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward transfer admittance Y fs Input capacitance C iss ...
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... RZL035P01 Electrical characteristics curves 10 Ta=25°C Pulsed -4. -2. -1. -1. -1. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -V [V] DS Fig.1 Typical output characteristics( Ⅰ ) 1000 Ta=25°C Pulsed V = -1. -1. -2. -4.5V GS 100 10 0 DRAIN-CURRENT : -I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ ) ...
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... RZL035P01 10 V =0V GS Pulsed 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0 0.5 1 SOURCE-DRAIN VOLTAGE : -V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25° - -3. =10Ω G Pulsed TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics ...
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