RDX030N60 ROHM Co. Ltd., RDX030N60 Datasheet

no-image

RDX030N60

Manufacturer Part Number
RDX030N60
Description
10v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet
Transistors
10V Drive Nch MOSFET
RDX030N60
Silicon N-channel MOSFET
1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.
Switching
∗1 Limited only by maximum temperature allowed
∗3 L = 5.4mH V
Channel to case
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Avalanche energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
Source current
(Body diode)
Type
RDX030N60
Structure
Features
Package specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
DD
Package
Code
Basic ordering unit (pieces)
=90V Rg=25Ω
Parameter
Parameter
∗4 L = 5.4mH V
Continuous
Pulsed
Continuous
Pulsed
Bulk
500
∗2 Pw
DD
=90V Rg=25Ω starting Tch=25°C
Rth(ch-c)
Symbol
Symbol
10µs, Duty cycle
V
V
Tstg
Tch
E
I
I
I
P
DSS
GSS
I
I
DP
SP
AS
D
S
AS
D
∗1
∗2
∗2
∗3
∗4
−55 to +150
Limits
Limits
1%
4.17
600
±30
±12
150
±3
12
28
30
3
3
∗1 GATE PROTECTION DIODE
∗2 BODY DIODE
Inner circuit
Dimensions (Unit : mm)
(1)Gate
(2)Drain
(3)Source
TO-220FM
°C/W
(1)
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
A
A
∗1
(2)
2.54
∗2
1.3
(1)
(3)
10.0
(2) (3)
(1) Gate
(2) Drain
(3) Source
1.2
2.54
0.8
RDX030N60
Rev.A
φ 3.2
0.75
4.5
2.8
2.6
1/4

Related parts for RDX030N60

RDX030N60 Summary of contents

Page 1

... S ∗ ∗ ∗ Tch 150 −55 to +150 Tstg ∗2 Pw 10µs, Duty cycle 1% =90V Rg=25Ω starting Tch=25°C DD Symbol Limits Rth(ch-c) 4.17 RDX030N60 φ 3.2 10.0 4.5 2.8 1.2 1.3 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) ∗1 ∗2 (1) (2) (3) (1) Gate (2) Drain (3) Source Unit ...

Page 2

... R L Min. Typ. Max. Unit ∗ − − ∗ − − 380 3A ∗ − − µC di/dt= 100A / µs 4.2 RDX030N60 Conditions =0V DS = 1mA D = 10V GS = 1.5A D 150 V 300V 10V GS = 10Ω G Conditions =0V GS =0V GS Rev.A 2/4 ...

Page 3

... Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1 V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0. 0.5 1 SOURCE-DRAIN VOLTAGE : V SD Fig.8 Source Current vs. Source-Drain Voltage RDX030N60 5 = −10V -50 - CHANNEL TEMPERATURE : T (V) Fig.3 Gate Threshold Voltage vs. Channel Temperature 7 ...

Page 4

... V GS Pulsed 100 REVERSE DRAIN CURRENT : I (A) DR Fig.10 Reverse Recovery Time vs. Reverse Drain Current 1000 Ta=25°C =150V V DD =10V V GS =10Ω Pulsed (off) 100 (on DRAIN CURRENT : I (A) D Fig.11 Switching Characteristcs RDX030N60 Rev.A 4/4 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

Related keywords