RDX050N50 ROHM Co. Ltd., RDX050N50 Datasheet - Page 2

• Manufacturer Part Number: RDX050N50
• Description: 10v Drive Nch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Reverse recovery time
Reverse recovery charge
∗ Pulsed
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
Q
GSS
DSS
Q
t
t
t
oss
SD
iss
rss
rr
r
gd
fs
f
gs
rr
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
500
2.0
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
500
100
340
1.1
3.0
8.5
2.2
25
15
20
40
28
16
−
−
−
−
4
−
Max.
Max.
±10
1.5
4.0
1.5
25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
µC
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
Ω
V
V
S
V
V
I
V
V
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
I
I
di/dt= 100A / µs
D
D
D
D
S
DR
GS
DS
DS
DS
DS
GS
DD
GS
DD
= 5A, V
= 1mA, V
= 2.5A, V
= 2.5A
L
G
= 5A
L
= 60Ω
= 50Ω, R
=10Ω
= 5A, V
= ±25V, V
= 500V, V
= 10V, I
= 10V, I
= 25V
=0V
= 10V
250V, V
150 V
GS
Conditions
Conditions
GS
GS
GS
G
=0V
D
D
= 10Ω
=0V
= 1mA
= 2.5A
=0V
= 10V
GS
DS
GS
=0V
=0V
= 10V
RDX050N50
2/2