NTD20N06 ON Semiconductor, NTD20N06 Datasheet - Page 6

• Manufacturer Part Number: NTD20N06
• Description: Power Mosfet
• Manufacturer: ON Semiconductor

100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
C
GS
0.00001
Figure 11. Maximum Rated Forward Biased
= 25 C
V
= 20 V
DS
0.02
0.05
D = 0.5
0.1
0.2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
0.01
Safe Operating Area
1
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
0.0001
100 ms
LIMIT
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
I
10 ms
S
0.001
Figure 13. Thermal Response
SAFE OPERATING AREA
10 ms
t
p
dc
http://onsemi.com
NTD20N06
100
di/dt
t, TIME (s)
t
a
P
6
(pk)
t
0.01
rr
DUTY CYCLE, D = t
t
b
I
S
180
160
140
120
100
80
60
40
20
t
0.25 I
1
0
25
t
2
Figure 12. Maximum Avalanche Energy versus
S
T
J
, STARTING JUNCTION TEMPERATURE ( C)
50
Starting Junction Temperature
0.1
1
TIME
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
75
J(pk)
qJC
(t) = r(t) R
− T
C
100
= P
qJC
(pk)
1
1
R
125
qJC
(t)
I
D
= 18.4 A
150
10
175