NTD4810NH ON Semiconductor, NTD4810NH Datasheet - Page 3
NTD4810NH
Manufacturer Part Number
NTD4810NH
Description
Power Mosfet 30 V, 54 A, Single Nchannel, Dpak/ipak
Manufacturer
ON Semiconductor
Datasheet
1.NTD4810NH.pdf
(8 pages)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
ELECTRICAL CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise noted)
Symbol
Q
V
t
R
L
L
L
L
RR
ta
tb
SD
RR
G
S
D
D
G
http://onsemi.com
NTD4810NH
V
V
GS
I
S
GS
= 30 A
= 0 V, dIs/dt = 100 A/ms,
3
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
T
T
J
J
= 125°C
= 25°C
Min
0.0164
0.88
0.79
13.4
2.49
1.88
3.46
0.75
Typ
9.1
4.3
6.7
Max
1.2
Unit
nC
nH
ns
W
V