NTD4810NH ON Semiconductor, NTD4810NH Datasheet - Page 5

• Manufacturer Part Number: NTD4810NH
• Description: Power Mosfet 30 V, 54 A, Single Nchannel, Dpak/ipak
• Manufacturer: ON Semiconductor

1000
1000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
100
2000
1750
1500
1250
1000
10
0.1
10
750
500
250
1
1
0
1
0.1
15
V
I
V
D
C
C
Figure 11. Maximum Rated Forward Biased
DD
GS
iss
rss
= 30 A
V
V
SINGLE PULSE
T
10
DS
= 15 V
= 11.5 V
C
t
GS
Figure 9. Resistive Switching Time
d(off)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 25°C
V
t
= 20 V
DS
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
r
R
G
5
R
THERMAL LIMIT
PACKAGE LIMIT
V
= 0 V
, GATE RESISTANCE (OHMS)
GS
DS(on)
Safe Operating Area
1
0
LIMIT
V
GS
V
C
DS
rss
5
= 0 V
10
10
10
TYPICAL PERFORMANCE CURVES
15
t
t
d(on)
f
20
T
J
10 ms
1 ms
10 ms
dc
100 ms
= 25°C
http://onsemi.com
25
NTD4810NH
C
C
iss
oss
100
100
30
5
15
12
9
6
3
0
0
Figure 8. Gate−To−Source and Drain−To−Source
30
25
20
15
10
70
60
50
40
30
20
10
0.4
5
0
0
25
T
Q
2
J
1
= 25°C
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
GS
J
4
V
V
= 25°C
0.5
SD
DS
= 0 V
Q
Q
50
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
6
G
2
Starting Junction Temperature
Voltage vs. Total Charge
T
, TOTAL GATE CHARGE (nC)
J
, JUNCTION TEMPERATURE (°C)
8
0.6
75
10
Q
T
12 14 16 18
0.7
100
0.8
125
0.9
20
V
GS
I
150
D
22 24
1.0
= 21 A
20
16
12
8
4
0
175
1.1