VN2210 Supertex, Inc., VN2210 Datasheet - Page 2

• Manufacturer Part Number: VN2210
• Description: N-channel Enhancement-mode Vertical Dmos Fets
• Manufacturer: Supertex, Inc.

*
Electrical Characteristics
Switching Waveforms and Test Circuit
Thermal Characteristics
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
TO-92
TO-39
I
D
(continuous) is limited by max rated T
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
t
OUTPUT
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
Package
GS(th)
DS(ON)
ISS
OSS
RSS
SD
FS
INPUT
DSS
GS(th)
DS(ON)
10V
V
0V
0V
DD
Static Drain-to-Source
ON-State Resistance
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
10%
I
D
(continuous)*
1.2A
1.7A
t
d(ON)
10%
t
GS(th)
(ON)
DS(ON)
90%
Parameter
j
.
t
with Temperature
r
with Temperature
I
D
10.0A
90%
(pulsed)
t
8.0A
d(OFF)
t
(@ 25°C unless otherwise specified)
(OFF)
t
90%
F
10%
Power Dissipation
Min
100
0.8
1.2
@ T
3
8
2
C
1.0W
6.0W
= 25
0.27
0.85
Typ
-4.3
300
125
500
4.5
0.4
1.0
17
50
10
10
50
30
1
°
C
Max
0.35
GENERATOR
-5.5
100
500
200
2.4
0.5
1.2
1.6
50
65
15
15
65
50
10
PULSE
°
125
C/W
θ
21
INPUT
R
jc
gen
mV/°C
%/°C
Unit
mA
ns
nA
µA
pF
ns
A
Ω
V
V
V
°
C/W
θ
170
125
ja
V
f = 1 MHz
V
V
V
V
V
V
T
V
V
V
V
V
V
I
R
V
V
V
D
GS
A
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DD
GS
GS
GEN
= 2A
= 125°C
= 0V, V
= 25V, I
= 0V, I
= V
= V
= ±20V, V
= 0V, V
= 0V, V
= 5V, V
= 10V, V
= 5V, I
= 10V, I
= 10V, I
= 25V
= 0V, I
= 0V, I
= 10Ω
DS
DS
Conditions
, I
, I
1.2A
1.7A
D
D
SD
SD
I
DS
D
D
DS
DS
DS
DR
D
D
D
= 10mA
= 1A
DS
= 10mA
= 10mA
= 4A
= 1A
= 2A
= 4A
= 4A
*
DS
= 25V
= Max Rating
= 0.8 Max Rating
= 25V
V
= 25V
DD
= 0V
R
L
D.U.T.
10.0A
OUTPUT
8.0A
I
DRM
VN2210