HAF2026RJ Renesas Electronics Corporation., HAF2026RJ Datasheet - Page 3

• Manufacturer Part Number: HAF2026RJ
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAF2026RJ
Electrical Characteristics
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain
current
Gate to source cut off voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn off delay time
Fall time
Body-drain diode forward
voltage
Body-drain diode reverse
recovery time
Over load shut down
operation time
Notes: 4. Pulse test
Rev.2.00
5. Including the junction temperature rise of the over lorded condition.
Jun 02, 2006
Item
note5
page 3 of 8
Symbol
V
V
V
I
I
V
R
R
GS(OP)1
GS(OP)2
Coss
(BR)DSS
(BR)GSS
(BR)GSS
I
I
I
I
I
I
t
t
|y
GSS1
GSS2
GSS3
GSS4
DSS1
DSS2
GS(off)
V
DS(on)
DS(on)
d(on)
d(off)
t
t
I
I
I
os1
os2
t
D1
D2
D3
t
t
rr
fs
DF
r
f
|
0.25
–2.5
0.26
Min
0.6
1.4
60
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.53
0.23
Typ
200
150
140
1.3
2.9
0.9
0.9
11
61
85
30
—
—
—
—
—
—
—
—
—
—
—
—
—
1
–100
Max
100
300
210
1.0
2.5
10
50
10
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Unit
m
m
mA
mA
mA
ms
ms
pF
ns
A
A
V
V
V
V
S
V
A
A
A
A
A
A
s
s
s
s
V
V
V
I
I
I
V
V
V
V
V
V
V
V
V
I
I
I
V
V
I
I
V
V
D
G
G
D
D
D
F
F
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
GS
= 1 A, V
= 1 A, V
= 10 mA, V
= 0.5 A, V
= 0.5 A, V
= 0.5 A, V
= 800 A, V
= –100 A, V
= 3.5 V, V
= 1.2 V, V
= 5 V, V
= 8 V, V
= 3.5 V, V
= 1.2 V, V
= –2.4 V, V
= 8 V, V
= 3.5 V, V
= 60 V, V
= 48 V, V
= 10 V, I
= 10 V, V
= 5 V, I
= 5 V, V
= 5 V, V
Test Conditions
GS
GS
D
DS
GS
GS
DS
DS
DS
DD
DD
= 0.5 A, R
D
= 0
= 0, di
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
= 1 mA
= 10 V
= 3 V
= 0
= 0
= 5 V
= 10 V
= 16 V
= 24 V
DS
DS
= 0
= 0
= 0, Ta = 125 C
= 0, f = 1MHz
= 2 V
= 2 V
= 0
= 0
= 0
= 0
= 0
= 0
F
/dt = 50 A/ s
Note4
Note4
Note4
L
(Ta = 25°C)
= 60