CA3141 Intersil Corporation, CA3141 Datasheet

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CA3141

Manufacturer Part Number
CA3141
Description
High-voltage Diode Array For Commercial, Industrial And Military Applications
Manufacturer
Intersil Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CA3141E
Manufacturer:
HARRIS
Quantity:
9
Part Number:
CA3141E
Quantity:
5 510
Part Number:
CA3141E
Manufacturer:
VISHAY
Quantity:
5 510
Part Number:
CA3141E
Quantity:
200
January 1999
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
Features
• Matched Monolithic Construction
• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at V
• High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)
• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)
Applications
• Balanced Modulators or Demodulators
• Analog Switches
• High-Voltage Diode Gates
• Current Ratio Detectors
Part Number Information
Pinout
CA3141E
PART NUMBER
- V
©
F
Harris Corporation 1999
Match (Each Diode Pair) . . . . 0.55mV At I
Semiconductor
RANGE (
-55 to 125
TEMP.
o
C)
16 Ld PDIP
PACKAGE
E16.3
F
PKG.
1
2
3
4
5
6
7
8
= 1mA
R
NO.
= 2V
High-Voltage Diode Array For Commercial,
TOP VIEW
CA3141
D
D
(PDIP)
D
D
D
2
4
3
5
1
1
D
D
Description
The CA3141E High Voltage Diode Array Consists of ten gen-
eral purpose high reverse breakdown diodes. Six diodes are
internally connected to form three common cathode diode
pairs, and the remaining four diodes are internally connected
to form two common anode diode pairs. Integrated circuit
construction assures excellent static and dynamic matching
of the diodes, making the CA3141 extremely useful for a
wide variety of applications in communications and switching
systems.
D
D
D
10
7
6
9
8
Industrial and Military Applications
16
15
14
13
12
11
10
9
CA3141
File Number
906.4

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CA3141 Summary of contents

Page 1

... Copyright Harris Corporation 1999 High-Voltage Diode Array For Commercial, Industrial and Military Applications Description The CA3141E High Voltage Diode Array Consists of ten gen- eral purpose high reverse breakdown diodes. Six diodes are = 1mA F internally connected to form three common cathode diode = 2V ...

Page 2

... FORWARD CURRENT ( A) FIGURE 1. DC FORWARD VOLTAGE DROP vs FORWARD CURRENT CA3141 Thermal Information Thermal Resistance (Typical, Note 1) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Dissipation (Any One Diode 50mW Maximum Junction Temperature (Die 175 Maximum Junction Temperature (Plastic Package 150 Maximum Storage Temperature Range . . . . . . . . . .-65 Maximum Lead Temperature (Soldering 10s) ...

Page 3

... FIGURE 5. DIODE ANODE-TO-SUBSTRATE CAPACITANCE vs REVERSE VOLTAGE 10V 0.1 0.01 0.1 0.01 1 FORWARD (ANODE) CURRENT (mA) FIGURE 7. FORWARD (CATHODE) CURRENT vs FORWARD (ANODE) CURRENT CA3141 (Continued) 1 0.8 0.6 0.4 0 CATHODE-TO-ANODE DC REVERSE VOLTAGE (V) FIGURE 4. DIODE CAPACITANCE vs CATHODE-TO-ANODE REVERSE VOLTAGE ...

Page 4

... Dambar protrusions shall not exceed 0.010 inch (0.25mm the maximum number of terminal positions. 10. Corner leads (1, N, N/2 and N for E8.3, E16.3, E18.3, E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm). CA3141 E16.3 (JEDEC MS-001-BB ISSUE D) 16 LEAD DUAL-IN-LINE PLASTIC PACKAGE SYMBOL ...

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