NP0G3D3 Panasonic Corporation of North America, NP0G3D3 Datasheet
NP0G3D3
Related parts for NP0G3D3
NP0G3D3 Summary of contents
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... Composite Transistors NP0G3D3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For digital circuits ■ Features • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment • Automatic insertion with the taping is possible ■ ...
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... NP0G3D3 ■ Electrical Characteristics T • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level ...
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... C −100 = − 25° −10 −1 −4 −8 −12 0 Input voltage V (V) IN SJJ00275AED NP0G3D3 250 = − 75° 25°C 200 −25°C 150 100 50 0 −1 −10 −100 Collector current I ...
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... NP0G3D3 Characteristics charts of Tr2 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0 0.3 mA 0 25° Collector-emitter voltage V (V) CE MHz = 25° Collector-base voltage V ( CE(sat) ...
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Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...