NP0A547 Panasonic Corporation of North America, NP0A547 Datasheet

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NP0A547

Manufacturer Part Number
NP0A547
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
Composite Transistors
NP0A547
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
Publication date: December 2003
• SSS-Mini type package, reduction of the mounting area and assem-
• Maximum package height (0.4 mm) contributes to develop thinner
• 2SC5829 × 2
Tr1
Tr2
Overall
bly cost by one half
equipments
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Parameter
*
Symbol
V
V
V
V
V
V
T
P
I
I
T
a
CBO
CEO
EBO
CBO
CEO
EBO
stg
C
C
T
j
= 25°C
−55 to +125
Rating
125
10
10
10
10
50
7
2
7
2
SJJ00256BED
Unit
mW
mA
mA
°C
°C
V
V
V
V
V
V
Marking Symbol: 1R
Internal Connection
1: Base (Tr1)
2: Emitter (Tr1)
3: Base (Tr2)
Display at No.1 lead
6
1
(0.35) (0.35)
0.12
1.00
5
2
+0.03
-0.02
±0.05
4
3
Tr1
6
1
5
2
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
4
3
Tr2
Unit: mm
0 to 0.02
1

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NP0A547 Summary of contents

Page 1

... Composite Transistors NP0A547 Silicon NPN epitaxial planar type For high-speed switching ■ Features • SSS-Mini type package, reduction of the mounting area and assem- bly cost by one half • Maximum package height (0.4 mm) contributes to develop thinner equipments ■ Basic Part Number • 2SC5829 × 2 ■ ...

Page 2

... NP0A547 ■ Electrical Characteristics T • Tr1 Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Collector output capacitance (Common base, input open circuited) Forward transfer gain Maximum unilateral power gain Noise figure Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. ...

Page 3

... Collector current I C  800 MHz = 25° 0 100 ( mA ) Collector current I C SJJ00256BED NP0A547  25°C = 75°C −25° 0.4 0.8 1.2 1.6 2 Base-emitter voltage V BE  ...

Page 4

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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