EMX4 ROHM Co. Ltd., EMX4 Datasheet

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EMX4

Manufacturer Part Number
EMX4
Description
High Transition Frequency Dual Transistors
Manufacturer
ROHM Co. Ltd.
Datasheet
Transistors
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
3) Low output capacitance. (Cob=0.9pF)
Please consider to design ESD protection circuit.
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
This product might cause chip aging and breakdown under the large electrified environment.
∗Transition frequency of the device.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
Basic ordering unit (pieces)
Features
Equivalent circuits
Package, marking, and packaging specifications
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
EMX4 / UMX4N
(4)
(3)
Package
Marking
(5)
Type
Code
(2)
Parameter
Parameter
(1)
(6)
EMX4 / UMX4N
IMX4
EMX4
EMT6
IMX4
(3)
8000
T2R
X4
(4)
(2)
T
(5)
=1.5GHz)
Symbol
UMX4N
UMT6
V
V
V
Tstg
3000
Pc
TR
(6)
(1)
Tj
X4
CBO
CEO
EBO
I
C
Symbol
rbb' Cc
V
BV
BV
BV
I
Cob
I
CE(sat)
h
NF
CBO
EBO
f
FE
CBO
CEO
T
EBO
150(TOTAL)
300(TOTAL)
−55 to +150
SMT6
IMX4
T108
3000
X4
Limits
150
30
20
50
3
Min.
600
30
20
27
3
1500
Typ.
0.95
Unit
mW
4.5
mA
°C
°C
6
V
V
V
∗1
∗2
Max.
270
0.5
0.5
0.5
1.6
13
MHz
Unit
µA
µA
dB
pF
ps
V
V
V
V
Dimensions (Unit : mm)
EMX4
ROHM : EMT6
UMX4N
ROHM : UMT6
EIAJ : SC-88
IMX4
ROHM : SMT6
EIAJ : SC-74
V
I
I
I
V
V
V
I
V
V
V
C
C
E
C
=10µA
CB
EB
CE
CE
CB
CB
CE
=10µA
=1mA
/I
B
=15V
=2V
/I
/I
/f=10V/1MHz, I
=10V, I
=12V, I
=20mA/4mA
C
E
EMX4 / UMX4N / IMX4
=10V/10mA
=10V/ −10mA, f=200MHz
C
C
=10mA , f=31.8MHz
=2mA , f=200MHz , Rg=50Ω
Conditions
E
=0A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.B
1/3

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EMX4 Summary of contents

Page 1

... Cob pF − rbb − − NF 4.5 dB EMX4 / UMX4N / IMX4 Dimensions (Unit : mm) EMX4 ROHM : EMT6 Each lead has same dimensions UMX4N ROHM : UMT6 Each lead has same dimensions EIAJ : SC-88 IMX4 ROHM : SMT6 Each lead has same dimensions EIAJ : SC-74 Conditions =10µA ...

Page 2

... Fig.5 Collector to base time constance vs. collector current 30 Ta=25°C =2mA I C f=200MHz COLLECTOR TO EMITTER VOLTAGE : V Fig.8 Insertion gain vs. collector voltage EMX4 / UMX4N / IMX4 5.0 =5 2.0 Cob 1.0 0.5 Cre 0.2 0.1 0.1 0.2 0 COLLECTOR TO BASE VOLTAGE : V Fig.3 Capacitance vs. reverse bias voltage ...

Page 3

... Transistors 30 Ta=25°C =2mA I C f=200MHz COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.10 Noise factor vs. collector voltage EMX4 / UMX4N / IMX4 Rev.B 3/3 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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