MAT01 Analog Devices, Inc., MAT01 Datasheet - Page 3

• Manufacturer Part Number: MAT01
• Description: Matched Monolithic Dual Transistor
• Manufacturer: Analog Devices, Inc.

TYPICAL ELECTRICAL CHARACTERISTICS
Parameter
Average Offset Voltage Drift
Average Offset Current Drift
Collector-Emitter-Leakage
Collector-Base-Leakage
Gain Bandwidth Product
Offset Voltage Stability
NOTES
1
2
3
4
5
6
7
Specifications subject to change without notice.
Exclude first hour of operation to allow for stabilization.
Parameter describes long-term average drift after first month of operation.
Sample tested.
The collector-base (I
I
Guaranteed by V
Guaranteed by I
reduced by a factor of two to ten times by connecting the substrate (package) to
a potential which is lower than either collector voltage.
CC
Current
Current
and I
CES
are guaranteed by measurement of I
OS
OS
test limits over temperature.
test (TCV
CBO
) and collector-emitter (I
OS
≅
V
T
OS
for V
Symbol
TCV
TCI
I
I
f
∆V
OS
CES
CBO
T
CBO
OS
CES
OS
V
OS
/T
.
) leakage currents may be
BE
) T = 298 ° K for T
A
= 25°C.
Conditions
V
V
V
First Month (Note 1)
Long-Term (Note 2)
(@ V
CE
CB
CE
= 30 V, V
= 30 V, I
= 10 V, I
CB
= 15 V and I
C
E
BE
= 0
= 10 mA
= 0
C
= 10 A, T
A
= +25 C, unless otherwise noted.)
MAT01N
Typical
0.35
15
90
25
450
2.0
0.2
µV/Mo
µV/Mo
pA/°C
µV/°C
MAT01
MHz
Unit
pA
pA