IMH3A ROHM Co. Ltd., IMH3A Datasheet - Page 2

• Manufacturer Part Number: IMH3A
• Description: General Purpose Dual Digital Transistors
• Manufacturer: ROHM Co. Ltd.

Transistors
∗
∗
∗
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
Absolute maximum ratings (Ta = 25°C)
Electrical characteristics (Ta = 25°C)
Transition frequency of the device
Electrical characteristic curves
500
100
200
50
20
10
1k
100µ 200µ 500µ 1m
5
2
1
Fig.1 DC current gain vs. collector
COLLECTOR CURRENT : I
Parameter
current
Parameter
EMH3,UMH3N
IMH3A
Ta=100°C
2m
−40°C
25°C
5m 10m 20m 50m100m
C
V
(A)
CE
= 5V
Symbol
V
V
V
Tstg
Pc
I
Tj
CBO
CEO
EBO
C
Symbol
BV
BV
BV
V
I
I
h
CE(sat)
CBO
EBO
R
f
FE
T
CBO
CEO
EBO
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
Fig.2 Collector-emitter saturation
100µ 200µ 500µ 1m
1
150 (TOTAL)
300 (TOTAL)
Min.
3.29
−55 to +150
100
50
50
5
−
−
−
−
Limits
100
150
COLLECTOR CURRENT : I
50
50
voltage vs. collector current
5
Typ.
250
250
4.7
−
−
−
−
−
−
Ta=100°C
2m
−40°C
25°C
Max.
6.11
600
0.5
0.5
0.3
5m 10m 20m 50m100m
−
−
−
−
Unit
mW
mA
°C
°C
V
V
V
MHz
Unit
C
µA
µA
kΩ
l
V
V
V
V
−
C
(A)
/l
∗
∗
B
=20
1
2
EMH3 / UMH3N / IMH3A
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
=50µA
=1mA
=50µA
/I
B
=4V
=50V
=5V, I
=10V, I
=5mA/0.25mA
C
=1mA
E
=−5mA, f=100MHz
Conditions
−
Rev.A
2/2
∗