FMA80N10T2 Fuji Electric holdings CO.,Ltd, FMA80N10T2 Datasheet - Page 17
![no-image](/images/manufacturer_photos/0/2/265/fuji_electric_holdings_co__ltd_sml.jpg)
FMA80N10T2
Manufacturer Part Number
FMA80N10T2
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.FMA80N10T2.pdf
(19 pages)
- Current page: 17 of 19
- Download datasheet (372Kb)
Fuji Electric Device Technology Co.,Ltd.
10
10
10
10
100
80
60
40
20
3
2
1
0
0
10
0
-1
Maximum Avalanche Energy vs. starting Tch
I(AV)=f(starting Tch):Vcc=48V
tr
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
25
10
50
0
Repetitive
tf
75
starting Tch [
ID [A]
10
100
1
Non-Repetitive
(Single Pulse)
C]
125
MS5F6117
10
150
2
td(on)
td(off)
175
10
200
3
17 / 19
H04-004-03
a
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