DIM200WHS17-A000 Dynex Semiconductor, DIM200WHS17-A000 Datasheet - Page 6

• Manufacturer Part Number: DIM200WHS17-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

DIM200WHS17-A000
6/8
400
350
300
250
200
150
100
50
0
0
Fig. 9 Diode reverse bias safe operating area
V
and not the auxiliary terminals
Fig. 7 Diode typical forward characteristics
F
is measured at power busbars
0.5
1.0
Foward voltage, V
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1.5
2.0
T
j
= 25˚C
F
- (V)
2.5
T
j
= 125˚C
3.0
3.5
450
400
350
300
250
200
150
100
1000
50
100
0.001
10
0
0
1
Conditions:
T
V
R
case
ge
g(off)
Fig. 8 Reverse bias safe operating area
200
= 15V
Fig. 10 Transient thermal impedance
= 125˚C
= 4.7ohms
Collector emitter voltage, V
400
0.01
600
Pulse width, t
800 1000 1200 1400 1600 1800
0.1
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p
- (s)
ce
- (V)
1
Transistor
Diode
10