DIM300WHS17-A000 Dynex Semiconductor, DIM300WHS17-A000 Datasheet - Page 5

• Manufacturer Part Number: DIM300WHS17-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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150
140
130
120
110
100
600
500
400
300
200
100
90
80
70
60
50
40
30
20
10
Fig. 5 Typical switching energy vs collector current
0
0
0
0
Common emitter.
T
V
and not the auxiliary terminals
case
ce
0.5
is measured at power busbars
Fig. 3 Typical output characteristics
= 25˚C
1
100
Collector-emitter voltage, V
1.5
Collector current, I
2
200
2.5
3
C
- (A)
3.5
ce
V
GE
300
- (V)
= 20V
4
15V
12V
10V
4.5
E
E
E
off
on
rec
400
5
200
100
300
250
200
150
100
600
500
400
300
50
0
Fig. 6 Typical switching energy vs gate resistance
0
0
0
Common emitter.
T
V
and not the auxiliary terminals
Conditions:
V
I
T
C
case
ce
ce
c
0.5
= 300A
= 125°C
is measured at power busbars
= 900V
= 125˚C
Fig. 4 Typical output characteristics
1 1.5
5
Collector-emitter voltage, V
Gate Resistance, R
2 2.5
10
DIM300WHS17-A000
3 3.5
g
15
- (Ohms)
4 4.5
ce
V
GE
- (V)
= 20V
20
15V
12V
10V
5 5.5
E
E
E
off
on
rec
25
6
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