DIM300WHS17-A000 Dynex Semiconductor, DIM300WHS17-A000 Datasheet - Page 6

• Manufacturer Part Number: DIM300WHS17-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

DIM300WHS17-A000
6/8
400
100
600
500
300
200
0
0
V
and not the auxiliary terminals
Fig. 9 Diode reverse bias safe operating area
Fig. 7 Diode typical forward characteristics
F
is measured at power busbars
0.5
1.0
Foward voltage, V
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1.5
2.0
T
j
= 25˚C
F
- (V)
2.5
T
j
= 125˚C
3.0
3.5
1000
900
800
700
600
500
400
300
200
100
100
0.001
10
0
1
0
Conditions:
T
V
R
case
ge
g(off)
200
Fig. 8 Reverse bias safe operating area
= 15V,
= 125˚C,
Fig. 10 Transient thermal impedance
= 6.2ohms
400
0.01
Collector emitter voltage, V
600
Pulse width, t
800 1000 1200 1400 1600 1800
0.1
www.dynexsemi.com
p
- (s)
ce
- (V)
1
Transistor
Diode
10