DIM200PLM33-F000 Dynex Semiconductor, DIM200PLM33-F000 Datasheet - Page 2

• Manufacturer Part Number: DIM200PLM33-F000
• Description: Igbt Modules - 3300v
• Manufacturer: Dynex Semiconductor

ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Q
PD
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
V
V
I
P
V
C(PK)
I
GES
I
CES
max
2
isol
C
t
SEMICONDUCTOR
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
Diode I
Isolation voltage – per module
Partial discharge - per module
2
2
t value (IGBT arm)
t value (Diode arm)
Parameter
V
T
1ms, T
T
V
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
case
case
GE
R
= 0, t
= 0V
= 90° C
= 25° C, T
case
P
= 10ms, T
=115° C
1
= 3500V, V
j
= 150° C
vj
Test Conditions
= 125° C
2
= 2600V, 50Hz RMS
DIM200PLM33-F000
Max.
3300
6000
±20
200
400
2.6
20
20
10
2
/
9
Units
kA
pC
W
V
V
A
A
V
2
S