DIM200PLM33-F000 Dynex Semiconductor, DIM200PLM33-F000 Datasheet - Page 5

• Manufacturer Part Number: DIM200PLM33-F000
• Description: Igbt Modules - 3300v
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
T
Symbol
Symbol
case
case
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
E
E
E
E
t
t
t
t
E
E
d(off)
d(on)
d(off)
d(on)
Q
Q
Q
I
REC
I
REC
OFF
OFF
t
t
t
t
= 25° C unless stated otherwise.
ON
= 125° C unless stated otherwise.
ON
rr
rr
f
r
f
r
g
rr
rr
SEMICONDUCTOR
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Gate charge
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Parameter
Parameter
R
R
I
I
L
F
F
G(ON)
G(ON)
= 200A, V
= 200A, V
dl
dl
Test Conditions
Test Conditions
100nH, C
F
F
R
R
V
V
/dt = 1600A/µs
/dt = 1600A/µs
V
V
= R
= R
C
L
Diode arm
Diode arm
G(ON)
G(ON)
I
CE
I
CE
C
GE
C
GE
ge
= 200A
= 200A
= 1800V
= 1800V
= 56nF
= ±15V
G(OFF)
100nH
= ±15V
G(OFF)
= 7.5
= 7.5
R
R
ge
= 1800V,
= 1800V,
= 16.5
= 16.5
= 56nF
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1950
1180
2200
1150
Typ.
Typ.
170
220
225
290
144
190
265
280
390
125
155
130
80
75
5
DIM200PLM33-F000
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
/
9
Units
Units
mJ
µC
mJ
µC
mJ
mJ
mJ
µC
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A