NUS5530MN ON Semiconductor, NUS5530MN Datasheet - Page 5

• Manufacturer Part Number: NUS5530MN
• Description: Integrated Power Mosfet With Pnp Low Vce Sat Switching Transistor
• Manufacturer: ON Semiconductor

0.15
0.05
0.2
0.1
20
16
12
0
4
8
0
0
0
−4.5 V
−4 V
−V
−V
Figure 1. On−Region Characteristics
DS
GS
0.5
Figure 3. On−Resistance versus
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
−5 V
Gate−to−Source Voltage
TYPICAL ELECTRICAL CHARACTERISTICS FOR P−CHANNEL FET
1
2
−3.5 V
1.6
1.4
0.8
0.6
1.2
1.5
1
−50
3
I
V
D
−25
GS
Figure 5. On−Resistance Variation with
= −3.9 A
2
= −4.5 V
−3 V
V
T
GS
J
I
T
D
, JUNCTION TEMPERATURE (°C)
J
0
T
= −3.9 A
4
= 25°C
= −1.5 V
2.5
J
= 25°C
−2.5 V
−2 V
http://onsemi.com
25
Temperature
5
3
50
5
0.15
0.05
75
0.2
0.1
20
16
12
8
4
0
0
Figure 4. On−Resistance versus Drain Current
0
2
100
−V
T
GS
0.5
Figure 2. Transfer Characteristics
J
125
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 25°C
6
−I
V
D,
GS
150
DRAIN CURRENT (AMPS)
and Gate Voltage
= 2.5 V
1
10
1.5
V
V
GS
GS
= 3.6 V
= 4.5 V
14
2
25°C
T
J
= −55°C
18
2.5
125°C
20
3