NUS5530MN ON Semiconductor, NUS5530MN Datasheet - Page 6

• Manufacturer Part Number: NUS5530MN
• Description: Integrated Power Mosfet With Pnp Low Vce Sat Switching Transistor
• Manufacturer: ON Semiconductor

1500
1200
900
600
300
0.01
0.1
0
1
0
0.0001
0.1
0.02
0.2
0.05
C
Duty Cycle = 0.5
rss
−V
C
C
Figure 6. Capacitance Variation
4
DS
iss
oss
, DRAIN−TO−SOURCE VOLTAGE ()
TYPICAL ELECTRICAL CHARACTERISTICS FOR P−CHANNEL FET
0.001
Single Pulse
Figure 9. Normalized Thermal Transient Impedance, Junction−to−Ambient
8
5
4
3
2
1
0
0.1
12
−V
0.01
Figure 8. Diode Forward Voltage versus
V
T
SD
J
GS
= 25°C
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
= 0 V
SQUARE WAVE PULSE DURATION (sec)
T
V
0.3
16
J
GS
= 25°C
= 0
http://onsemi.com
0.1
Current
20
0.5
6
5
4
3
2
1
0
0
Drain−to−Source Voltage versus Total Charge
Q
GS
0.7
P
1
DM
DUTY CYCLE, D = t
1
Figure 7. Gate−to−Source and
t
2
1
Q
G
t
2
, TOTAL GATE CHARGE (nC)
0.9
3
Q
GD
4
1
/t
10
2
Q
5
G
PER UNIT BASE = R
T
SURFACE MOUNTED
JM
− T
6
A
= P
I
T
Q
D
J
7
GD
= −3.9 A
DM
= 25°C
100
/Q
Z
qJA
GS
8
(t)
qJA
= 3.0
= 80°C/W
9
10
11
10
9
8
7
6
5
4
3
2
1
0
1000