NUS2501W6 ON Semiconductor, NUS2501W6 Datasheet

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NUS2501W6

Manufacturer Part Number
NUS2501W6
Description
Integrated Npn Digital Transistor With Switching Transistor With Switching
Manufacturer
ON Semiconductor
Datasheet
NUS2501W6
Integrated NPN Digital
Transistor with Switching
Diode Array
discrete solution of a single transistor with three switching diodes.
BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT technology eliminates
these individual components by integrating them into a single device,
therefore integration of a single BRT with three switching diodes
results in a significant reduction of both system cost and board space.
This new device is offered in the SC−88 surface mount package.
Features
Benefits
Applications
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 1
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current
Diode Reverse Voltage
Diode Peak Reverse Voltage
Diode Forward Current
Diode Peak Forward Current
This new option of integrated devices is designed to replace a
Single SC−88 Surface Mount Package
Moisture Sensitivity Level 1
Integration of Six Discrete Components
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Wireless Phones
Handheld Products
Notebook Computers
LCD Display Panels
Rating
(T
A
= 25°C unless otherwise noted.)
Symbol
V
V
V
I
V
CBO
CEO
I
I
FM
RM
C
F
R
Value
100
100
300
50
50
80
80
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
†For information on tape and reel specifications,
NUS2501W6T1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
6
Device
1
1
2
3
ORDERING INFORMATION
LG = Specific Device Code
d
http://onsemi.com
= Date Code
CASE 419B
(SOT−363)
SC−88
Package
SC−88
Publication Order Number:
3000 Tape & Reel
6
1
MARKING
DIAGRAM
NUS2501W6/D
Shipping†
LG
6
5
4
d

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NUS2501W6 Summary of contents

Page 1

... LG = Specific Device Code d = Date Code ORDERING INFORMATION Device Package Shipping† NUS2501W6T1 SC−88 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NUS2501W6/D d ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current Collector−Emitter Cutoff Current Emitter−Base Cutoff Current Collector−Base Breakdown Voltage Collector−Emitter Breakdown Voltage (Note 1) Diode Reverse Breakdown Voltage Diode Reverse Voltage Leakage Current Diode Forward Voltage Diode Capacitance ON CHARACTERISTICS (Note 1) ...

Page 3

TYPICAL TRANSISTOR ELECTRICAL CHARACTERISTICS −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 1. V versus I CE(sat) 1 0.8 0.6 0.4 0 ...

Page 4

TYPICAL DIODE ELECTRICAL CHARACTERISTICS 100 T = 85° 1 25°C A 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 6. Forward Voltage 1.75 1.5 1.25 1 ...

Page 5

... G 0.026 BSC 0.65 BSC H −−− 0.004 −−− 0.10 J 0.004 0.010 0.10 0.25 K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20 0.95 0.037 0.95 0.037 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NUS2501W6/D ...

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