NUS2501W6 ON Semiconductor, NUS2501W6 Datasheet - Page 2

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NUS2501W6

Manufacturer Part Number
NUS2501W6
Description
Integrated Npn Digital Transistor With Switching Transistor With Switching
Manufacturer
ON Semiconductor
Datasheet
1. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2%.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS
Collector−Base Cutoff Current
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage (Note 1)
Diode Reverse Breakdown Voltage
Diode Reverse Voltage Leakage Current
Diode Forward Voltage
Diode Capacitance
DC Current Gain
Collector−Emitter Saturation Voltage
Output Voltage(on)
Output Voltage(off)
Input Resistor
Resistor Ratio
Characteristic
(T
A
= 25°C unless otherwise noted.)
V
V
Symbol
V
(BR)CBO
(BR)CEO
R
http://onsemi.com
V
I
I
I
CE(sat)
V
V
h
CBO
CEO
EBO
C
V
R
1
(BR)
I
FE
OH
OL
R
/R
F
D
1
2
2
V
I
V
V
V
C
CE
CC
CC
R
V
I
= 10 mA, I
V
V
I
C
Test Conditions
= 6.0 V, f = 1.0 MHz
C
EB
CB
CE
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 2.0 mA, I
= 10 mA, I
I
I
R
R
F
R
V
= 6.0 V, I
= 50 V, I
= 50 V, I
L
L
= 100 mA
R
= 100 mA
= 1.0 kW
= 1.0 kW
= 70 V
C
B
B
B
= 5.0 mA
= 0.3 mA
E
E
B
C
B
= 3.5 V,
= 0.5 V,
= 0
= 0
= 0
= 0
= 0
32.9
Min
4.9
0.8
50
50
80
80
Typ
140
1.0
Max
0.25
61.1
100
500
0.1
0.1
1.2
3.5
0.2
1.2
mAdc
nAdc
nAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF

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