MJF18006 Inchange Semiconductor Company, MJF18006 Datasheet - Page 2
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MJF18006
Manufacturer Part Number
MJF18006
Description
Silicon Npn Power Transistors
Manufacturer
Inchange Semiconductor Company
Datasheet
1.MJF18006.pdf
(3 pages)
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Part Number
Manufacturer
Quantity
Price
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
SYMBOL
V
V
V
V
V
CEO(SUS)
h
h
h
h
CEsat-1
CEsat-2
BEsat-1
BEsat-2
I
I
C
I
CES
CEO
EBO
t
t
t
t
FE-1
FE-2
FE-3
FE-4
f
on
on
off
off
OB
T
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
Transition frequency
Collector outoput capacitance
Turn-on time
Turn-off time
Turn-on time
Turn-off time
PARAMETER
I
I
T
I
T
I
I
V
V
V
V
V
I
I
I
I
I
I
V
I
V
I
C
C
C
C
C
C
C
C
C
C
E
B1
B1
C
C
CES
EB
CES
CE
EB
CC
CC
=0 ; V
=0.1A; L=25mH
=1.5A ;I
=3A ;I
=1.5A; I
=3A; I
=0.5A ; V
=3A ; V
=1.5A ; V
=10mA ; V
=0.5A ; V
=125℃
=125℃
=0.6A; I
=0.13A; I
=0
=RatedV
=9V; I
=300V ,I
=300V ,I
=RatedV
=800V
B
CB
B
2
CONDITIONS
=0.6A
=0.6A
CE
C
B
B
=10V;f=1.0MHz
B2
=0.15A
=0
=0.15A
CE
CE
CE
=1V
B2
CE
C
=1.5A
C
CEO
=5V
=1V
=10V;f=1.0MHz
=3A
=1.3A
CES;
=0.65A
=5V
; I
B
=0
T
C
=125℃
MIN
450
14
10
11
6
Product Specification
TYP.
1.7
0.2
1.2
14
75
90
MJF18006
MAX
0.65
180
0.6
0.7
0.8
1.2
0.1
0.5
0.1
0.1
0.1
2.5
0.3
2.5
34
1.3
UNIT
MHz
mA
mA
mA
μs
μs
μs
pF
ns
V
V
V
V
V