BUD44D2 Freescale Semiconductor, Inc, BUD44D2 Datasheet - Page 6

• Manufacturer Part Number: BUD44D2
• Description: High Speed, High Gain Bipolar Npn Power Transistor With Integrated Collector-emitter Diode And Built-in Efficient Antisaturation Network
• Manufacturer: Freescale Semiconductor, Inc

BUD44D2
6
1000
4000
3500
3000
2500
2000
1500
1000
100
700
600
500
400
300
200
100
10
1
0
0
0
1
I Bon = I Boff
V CC = 15 V
V Z = 300 V
L C = 200 H
Figure 11. Resistive Switch Time, t off
Figure 13. Inductive Switching,
T J = 125 C
T J = 25 C
T J = 125 C
T J = 25 C
0.5
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
t c & t fi @ I C /I B = 5
C ib (pF)
I C /I B = 10
I C /I B = 5
10
1
1
TYPICAL SWITCHING CHARACTERISTICS
I Bon = I Boff
V CC = 300 V
PW = 40 s
C ob (pF)
1.5
T J = 25 C
f (test) = 1 MHz
t c
t fi
I C /I B = 5
100
2
2
1000
800
600
400
200
2.5
1.5
0.5
0
3
2
1
0
4
3
2
1
0
0.2
0.4
3
Motorola Bipolar Power Transistor Device Data
I C = 1 A
I C /I B = 5
Figure 10. Resistive Switch Time, t on
Figure 12. Inductive Storage Time,
Figure 14. Inductive Storage Time
T J = 125 C
T J = 25 C
T J = 125 C
T J = 25 C
I C = 0.3 A
T J = 125 C
T J = 25 C
0.8
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
6
0.8
h FE , FORCED GAIN
t si @ I C /I B = 5
I C /I B = 10
1.2
9
1.4
I Bon = I Boff
V CC = 300 V
PW = 40 s
I Bon = I Boff
V CC = 15 V
V Z = 300 V
L C = 200 H
1.6
12
I Bon = I Boff
V CC = 15 V
V Z = 300 V
L C = 200 H
15
2
2