BUD44D2 Freescale Semiconductor, Inc, BUD44D2 Datasheet - Page 7

• Manufacturer Part Number: BUD44D2
• Description: High Speed, High Gain Bipolar Npn Power Transistor With Integrated Collector-emitter Diode And Built-in Efficient Antisaturation Network
• Manufacturer: Freescale Semiconductor, Inc

Motorola Bipolar Power Transistor Device Data
3000
2000
1000
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
0
0
0
0.4
3
0
I Boff = I Bon
V CC = 15 V
V Z = 300 V
L C = 200 H
I C /I B = 5
Figure 19. Inductive Storage Time, t si
I B = 50 mA
0.5
Figure 17. Inductive Switching, t fi
5
T J = 125 C
T J = 25 C
Figure 15. Inductive Fall Time
I B = 100 mA
0.8
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
7
1
I B = 200 mA
h FE , FORCED GAIN
T J = 125 C
T J = 25 C
I B = 500 mA
1.2
1.5
9
I Bon = I Boff
V CC = 15 V
TYPICAL SWITCHING CHARACTERISTICS
I C /I B = 20
11
2
I C = 0.3 A
1.6
I Bon = I Boff
V CC = 15 V
V Z = 300 V
L C = 200 H
V Z = 300 V
L C = 200 H
I C /I B = 10
13
2.5
I C = 1 A
15
3
2
1000
2000
1500
1000
3000
2500
2000
1500
1000
800
600
400
200
500
500
0
0
0.4
3
0
I Bon = I Boff
V CC = 15 V
V Z = 300 V
L C = 200 H
I Bon = I Boff
V CC = 15 V
V Z = 300 V
L C = 200 H
I Boff = I C /2
V CC = 15 V
V Z = 300 V
L C = 200 H
Figure 20. Inductive Storage Time, t si
Figure 16. Inductive Crossover Time
Figure 18. Inductive Switching, t c
T J = 125 C
T J = 25 C
0.8
0.5
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
6
I C /I B = 20
h FE , FORCED GAIN
T J = 125 C
T J = 25 C
1.2
1
9
I C /I B = 20
I C = 1 A
I C = 0.3 A
I C /I B = 10
I C /I B = 10
1.6
12
1.5
BUD44D2
T J = 125 C
T J = 25 C
7
15
2
2